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dc.contributor.authorKlym, H.-
dc.contributor.authorKostiv, Yu-
dc.contributor.authorIvanusa, A.-
dc.contributor.authorChalyy, D.-
dc.date.accessioned2017-01-26T22:07:48Z-
dc.date.available2017-01-26T22:07:48Z-
dc.date.issued2016-10-19-
dc.identifier.citationKlym H., Kostiv Yu., Ivanusa A., Chalyy D. Nanostructural modification of free volume in chalcohalide glass-ceramics caused by crystallization process // Abstracts of the XII International Scien-tific Conference «Electronics and Applied Physics», October 19-22, 2016, Kyiv, Ukraine, p. 113-114.uk
dc.identifier.urihttp://hdl.handle.net/123456789/3355-
dc.description.abstractModification of free volume caused by crystallization process in (80GeS2-20Ga2S3)100-х(СsCl)x, 0 < x < 10 chalcohalide glass-ceramics was studied by positron annihilation lifetime technique. It is established that CsCl additives in Ge-Ga-S glassy matrix transform defect-related component spectra, indicating that the agglomeration of free-volume voids occurs in initial and crystallized (80GeS2-20Ga2S3)100-х(СsCl)x, 0 < x < 10 glasses. Full crystallization in each of these glasses corresponds to the void constriction.uk
dc.publisherTaras Shevchenko National University of Kyivuk
dc.titleNanostructural modification of free volume in chalcohalide glass-ceramics caused by crystallization pro-cessuk
dc.typeThesisuk
Appears in Collections:Наукові праці за 2016 р.

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