Please use this identifier to cite or link to this item: https://sci.ldubgd.edu.ua/jspui/handle/123456789/3979
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dc.contributor.authorKlym, H.-
dc.contributor.authorKostiv, Yu.-
dc.contributor.authorIvanusa, A.-
dc.contributor.authorChalyy, D.-
dc.date.accessioned2017-11-07T08:51:54Z-
dc.date.available2017-11-07T08:51:54Z-
dc.date.issued2016-10-19-
dc.identifier.citationKlym H., Kostiv Yu., Ivanusa A., Chalyy D. Nanostructural modification of free volume in chalcohalide glass-ceramics caused by crystallization process // Abstracts of the XII International Scientific Conference «Electronics and Applied Physics», October 19-22, 2016, Kyiv, Ukraine, p. 113-114.uk
dc.identifier.urihttp://hdl.handle.net/123456789/3979-
dc.description.abstractModification of free volume caused by crystallization process in (80GeS2-20Ga2S3)100-х(СsCl)x, 0  x  10 chalcohalide glass-ceramics was studied by positron annihilation lifetime technique. It is established that CsCl additives in Ge-Ga-S glassy matrix transform defect-related component spectra, indicating that the agglomeration of free-volume voids occurs in initial and crystallized (80GeS2-20Ga2S3)100-х(СsCl)x, 0  x  10 glasses. Full crystallization in each of these glasses corresponds to the void constriction.uk
dc.language.isoenuk
dc.titleNANOSTRUCTURAL MODIFICATION OF FREE VOLUME IN CHALCOHALIDE GLASS-CERAMICS CAUSED BY CRYSTALLIZATION PROCESSuk
dc.typeThesisuk
Appears in Collections:2016

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