Please use this identifier to cite or link to this item: http://sci.ldubgd.edu.ua:8080/jspui/handle/123456789/3979
Title: NANOSTRUCTURAL MODIFICATION OF FREE VOLUME IN CHALCOHALIDE GLASS-CERAMICS CAUSED BY CRYSTALLIZATION PROCESS
Authors: Klym, H.
Kostiv, Yu.
Ivanusa, A.
Chalyy, D.
Issue Date: 19-Oct-2016
Citation: Klym H., Kostiv Yu., Ivanusa A., Chalyy D. Nanostructural modification of free volume in chalcohalide glass-ceramics caused by crystallization process // Abstracts of the XII International Scientific Conference «Electronics and Applied Physics», October 19-22, 2016, Kyiv, Ukraine, p. 113-114.
Abstract: Modification of free volume caused by crystallization process in (80GeS2-20Ga2S3)100-х(СsCl)x, 0  x  10 chalcohalide glass-ceramics was studied by positron annihilation lifetime technique. It is established that CsCl additives in Ge-Ga-S glassy matrix transform defect-related component spectra, indicating that the agglomeration of free-volume voids occurs in initial and crystallized (80GeS2-20Ga2S3)100-х(СsCl)x, 0  x  10 glasses. Full crystallization in each of these glasses corresponds to the void constriction.
URI: http://hdl.handle.net/123456789/3979
Appears in Collections:2016

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