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|Title:||NANOSTRUCTURAL MODIFICATION OF FREE VOLUME IN CHALCOHALIDE GLASS-CERAMICS CAUSED BY CRYSTALLIZATION PROCESS|
|Citation:||Klym H., Kostiv Yu., Ivanusa A., Chalyy D. Nanostructural modification of free volume in chalcohalide glass-ceramics caused by crystallization process // Abstracts of the XII International Scientific Conference «Electronics and Applied Physics», October 19-22, 2016, Kyiv, Ukraine, p. 113-114.|
|Abstract:||Modification of free volume caused by crystallization process in (80GeS2-20Ga2S3)100-х(СsCl)x, 0 x 10 chalcohalide glass-ceramics was studied by positron annihilation lifetime technique. It is established that CsCl additives in Ge-Ga-S glassy matrix transform defect-related component spectra, indicating that the agglomeration of free-volume voids occurs in initial and crystallized (80GeS2-20Ga2S3)100-х(СsCl)x, 0 x 10 glasses. Full crystallization in each of these glasses corresponds to the void constriction.|
|Appears in Collections:||2016|
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|Proceedings-APHYS-2016.pdf||Thesis||1.38 MB||Adobe PDF||View/Open|
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