Please use this identifier to cite or link to this item:
https://sci.ldubgd.edu.ua/jspui/handle/123456789/3979| Title: | NANOSTRUCTURAL MODIFICATION OF FREE VOLUME IN CHALCOHALIDE GLASS-CERAMICS CAUSED BY CRYSTALLIZATION PROCESS |
| Authors: | Klym, H. Kostiv, Yu. Ivanusa, A. Chalyy, D. |
| Issue Date: | 19-Oct-2016 |
| Citation: | Klym H., Kostiv Yu., Ivanusa A., Chalyy D. Nanostructural modification of free volume in chalcohalide glass-ceramics caused by crystallization process // Abstracts of the XII International Scientific Conference «Electronics and Applied Physics», October 19-22, 2016, Kyiv, Ukraine, p. 113-114. |
| Abstract: | Modification of free volume caused by crystallization process in (80GeS2-20Ga2S3)100-х(СsCl)x, 0 x 10 chalcohalide glass-ceramics was studied by positron annihilation lifetime technique. It is established that CsCl additives in Ge-Ga-S glassy matrix transform defect-related component spectra, indicating that the agglomeration of free-volume voids occurs in initial and crystallized (80GeS2-20Ga2S3)100-х(СsCl)x, 0 x 10 glasses. Full crystallization in each of these glasses corresponds to the void constriction. |
| URI: | http://hdl.handle.net/123456789/3979 |
| Appears in Collections: | 2016 |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| Proceedings-APHYS-2016.pdf | Thesis | 1.38 MB | Adobe PDF | View/Open |
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